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STM8AF526ATCU View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8AF526ATCU Datasheet PDF : 125 Pages
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STM8AF526x/8x/Ax STM8AF6269/8x/Ax
Electrical characteristics
Table 32. HSE oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
-
CL1/CL2(1) Recommended load capacitance
-
-
220
-
-
gm
Oscillator trans conductance
-
5
-
tSU(HSE)(2) Startup time
VDD is
stabilized
-
2.8
-
kΩ
20
pF
-
mA/V
-
ms
1.
The oscillator needs two load
(CL1 * CL2)/(CL1 + CL2). If CL1
c=aCpaLc2i,toCrlso,adC=L1CaLn1d/2.CSLo2,mtoe
act as load for the crystal. The total load capacitance
oscillators have built-in load capacitors, CL1 and CL2.
(CLoad)
is
2. This value is the startup time, measured from the moment it is enabled (by software) until a stabilized 24 MHz oscillation is
reached. It can vary with the crystal type that is used.
Figure 20. HSE oscillator circuit diagram
5P
/P
&2
&P
5HVRQDWRU
&/
26&,1
5HVRQDWRU
I+6(WRFRUH
5)
JP
&XUUHQWFRQWURO
&/
26&287
670
HSE oscillator critical gm formula
The crystal characteristics have to be checked with the following formula:
Equation 1
gm » gmcrit
where gmcrit can be calculated with the crystal parameters as follows:
Equation 2
gmcrit = (2 × Π × fHSE)2 × Rm(2Co + C)2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1 = CL2 = C: Grounded external capacitance
06Y9
DocID14395 Rev 15
69/125
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