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STM8AP6269TCY View Datasheet(PDF) - STMicroelectronics

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STM8AP6269TCY Datasheet PDF : 125 Pages
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STM8AF526x/8x/Ax STM8AF6269/8x/Ax
Electrical characteristics
Table 37. Data memory
Symbol
Parameter
Condition
Min Max Unit
TWE Temperature for writing and erasing
-
-40
150
°C
NWE
Data memory endurance(1)
(erase/write cycles)
tRET Data retention time
TA = 25 °C
300 k
-
TA = -40°C to 125 °C 100 k(2) -
TA = 25 °C
40(2)(3)
-
TA = 55 °C
20(2)(3)
-
cycles
years
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
2. More information on the relationship between data retention time and number of write/erase cycles is
available in a separate technical document.
3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C.
DocID14395 Rev 15
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