STM8AP5289UCY View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STM8AP5289UCY
STMicroelectronics
STM8AP5289UCY Datasheet PDF : 125 Pages
| |||
Electrical characteristics
STM8AF526x/8x/Ax STM8AF6269/8x/Ax
10.3.6 I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 38. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL Low-level input voltage
VIH High-level input voltage
Vhys Hysteresis(1)
VOH High-level output voltage
-
Standard I/0, VDD = 5 V,
I = 3 mA
Standard I/0, VDD = 3 V,
I = 1.5 mA
-0.3 V
0.7 x VDD
-
0.3 x VDD
VDD + 0.3 V
0.1 x
VDD
-
V
VDD - 0.5 V
-
-
VDD - 0.4 V
-
-
High sink and true open
drain I/0, VDD = 5 V
-
I = 8 mA
-
0.5
VOL Low-level output voltage
Standard I/0, VDD = 5 V
I = 3 mA
-
-
0.6
V
Standard I/0, VDD = 3 V
I = 1.5 mA
-
-
0.4
Rpu Pull-up resistor
VDD = 5 V, VIN = VSS
Fast I/Os
Load = 50 pF
35
50
65
kΩ
-
-
35(2)
tR, tF
Rise and fall time
(10% - 90%)
Standard and high sink I/Os
Load = 50 pF
-
Fast I/Os
Load = 20 pF
-
-
125(2)
ns
-
20(2)
Standard and high sink I/Os
Load = 20 pF
-
-
50(2)
Ilkg
Digital input pad leakage
current
VSS ≤ VIN ≤ VDD
-
-
±1
µA
Ilkg ana
Analog input pad leakage
current
VSS ≤ VIN ≤ VDD
-40 °C < TA < 125 °C
VSS ≤ VIN ≤ VDD
-40 °C < TA < 150 °C
-
-
Ilkg(inj)
Leakage current in
adjacent I/O(3)
Injection current ±4 mA
-
-
±250
nA
-
±500
-
±1(3)
µA
IDDIO
Total current on either
VDDIO or VSSIO
Including injection currents
-
-
60
mA
1. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results, not tested in
production.
74/125
DocID14395 Rev 15
Share Link: 