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STM8AF52A8TDX View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8AF52A8TDX Datasheet PDF : 125 Pages
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Electrical characteristics
STM8AF526x/8x/Ax STM8AF6269/8x/Ax
Electromagnetic interference (EMI)
Emission tests conform to the IEC 61967-2 standard for test software, board layout and pin
loading.
Table 46. EMI data
Conditions
Symbol Parameter
General
conditions
Monitored
frequency band
Max fCPU(1)
8
16 24
MHz MHz MHz
Unit
Peak level
SEMI
EMI level
VDD = 5 V,
0.1 MHz to 30 MHz 15 17 22
TA = 25 °C,
30 MHz to 130 MHz 18 22 16
LQFP80 package
dBµV
conforming to IEC 130 MHz to 1 GHz -1
3
5
61967-2
-
2
2.5 2.5
1. Guaranteed by characterization results, not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 47. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = 25 °C, conforming
to JESD22-A114
3A
4000
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = 25 °C, conforming
to JESD22-C101
3
500
V
VESD(MM)
Electrostatic discharge voltage
(charge device model)
TA = 25 °C, conforming
to JESD22-A115
B
200
1. Guaranteed by characterization results, not tested in production
88/125
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