STM32F100C8T6B View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F100C8T6B

Low & medium-density value line, advanced ARM®-based 32-bit MCU with 16 to 128 KB Flash, 12 timers, ADC, DAC & 8 comm interfaces

STMicroelectronics 

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB

Electrical characteristics

Low-speed internal (LSI) RC oscillator

Table 24. LSI oscillator characteristics (1)

Symbol

Parameter

Min

Typ

fLSI

Frequency

30

ΔfLSI(T) Temperature-related frequency drift(2)

-9

tsu(LSI)(3) LSI oscillator startup time

-

IDD(LSI)(3) LSI oscillator power consumption

-

1. VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified.

2. Guaranteed by characterization results.

3. Guaranteed by design.

40

-

-

0.65

Max

60

9

85

1.2

Unit

kHz

%

µs

µA

Wakeup time from low-power mode

The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI

RC oscillator. The clock source used to wake up the device depends from the current

operating mode:

• Stop or Standby mode: the clock source is the RC oscillator

• Sleep mode: the clock source is the clock that was set before entering Sleep mode.

All timings are derived from tests performed under the ambient temperature and VDD supply

voltage conditions summarized in Table 8.

Table 25. Low-power mode wakeup timings

Symbol

Parameter

Typ

Unit

tWUSLEEP(1)

Wakeup from Sleep mode

1.8

µs

tWUSTOP(1)

Wakeup from Stop mode (regulator in run mode)

Wakeup from Stop mode (regulator in low-power mode)

3.6

5.4

µs

tWUSTDBY(1) Wakeup from Standby mode

50

µs

1. The wakeup times are measured from the wakeup event to the point at which the user application code

reads the first instruction.

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