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STM32F100V8 View Datasheet(PDF) - STMicroelectronics

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STM32F100V8 Datasheet PDF : 96 Pages
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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.13 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 34 are derived from tests
performed under the conditions summarized in Table 8. All I/Os are CMOS and TTL
compliant.
Table 34. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Standard I/O input low
level voltage
VIL I/O FT(1) input low
level voltage
Standard I/O input
high level voltage
VIH I/O FT(1) input high
level voltage
Standard I/O Schmitt
Vhys
trigger voltage
hysteresis(2)
I/O FT Schmitt trigger
voltage hysteresis(2)
-
VDD > 2 V
VDD ≤2 V
-
–0.3
- 0.28*(VDD–2 V)+0.8 V
–0.3
- 0.32*(VDD–2 V)+0.75 V
V
0.41*(VDD–2 V) +1.3 V -
VDD+0.3
5.5
0.42*(VDD–2)+1 V
-
5.2
200
-
-
mV
5% VDD(3)
-
-
mV
Ilkg
Input leakage
current(4)
VSS ≤VIN ≤VDD
Standard I/Os
VIN = 5 V
I/O FT
-
-
-
-
±1
µA
3
RPU
Weak pull-up
equivalent resistor(5)
VIN = VSS
30
40
50
kΩ
RPD
Weak pull-down
equivalent resistor(5)
VIN = VDD
30
40
50
kΩ
CIO I/O pin capacitance
-
-
5
-
pF
1. FT = 5V tolerant. To sustain a voltage higher than VDD+0.3 the internal pull-up/pull-down resistors must be disabled.
2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by design.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5.
Pull-up and pull-down resistors are designed with
PMOS/NMOS contribution to the series resistance is
ma itnriumeumres(~is1ta0n%ceoridnesre).ries
with
a
switchable
PMOS/NMOS.
This
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 22 and Figure 23 for standard I/Os, and
in Figure 24 and Figure 25 for 5 V tolerant I/Os.
DocID16455 Rev 9
57/96
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