STM8S207R6T6BTR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S207R6T6BTR

Performance line, 24 MHz STM8S 8-bit MCU, up to 128 KB Flash, integrated EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN

STMicroelectronics 

Electrical characteristics

STM8S207xx, STM8S208xx

10.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA. fHSE

High speed internal RC oscillator (HSI)

Table 33. HSI oscillator characteristics

Symbol

Parameter

Conditions

fHSI Frequency

Accuracy of HSI oscillator

Trimmed by the

CLK_HSITRIMR register

for given VDD and TA

conditions

VDD = 5 V, TA = 25 °C

ACCHSI

Accuracy of HSI oscillator

(factory calibrated)

VDD = 5 V,

25 °C ≤ TA ≤ 85 °C

2.95 V ≤ VDD ≤ 5.5 V,

-40 °C ≤ TA ≤ 125 °C

tsu(HSI)

HSI oscillator wakeup

time including calibration

IDD(HSI)

HSI oscillator power

consumption

1. Guaranteeed by design, not tested in production.

2. Data based on characterization results, not tested in production

Min Typ Max Unit

16

MHz

-1.0(1)

1.0

-1.5

1.5

-2.2

2.2

%

-3.0(2)

3.0(2)

1.0(1)

µs

170 250(2) µA

Figure 18. Typical HSI frequency variation vs VDD at 4 temperatures

-40˚C

3%

25˚C

85˚C

2%

125˚C

1%

0%

-1%

-2%

-3%

2.5

3

3.5

4

4.5

5

5.5

6

VDD (V)

ai15067

66/103

Doc ID 14733 Rev 12

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