STM8S207R8 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S207R8

Performance line, 24 MHz STM8S 8-bit MCU, up to 128 KB Flash, integrated EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN

STMicroelectronics 

Electrical characteristics

STM8S207xx, STM8S208xx

10.3.5

Memory characteristics

RAM and hardware registers

Table 35. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Unit

VRM

Data retention mode(1)

Halt mode (or reset)

VIT-max(2)

V

1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design, not tested in production.

2. Refer to Table 19 on page 56 for the value of VIT-max.

Flash program memory/data EEPROM memory

General conditions: TA = -40 to 125 °C.

Table 36. Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min(1) Typ Max Unit

VDD

Operating voltage

(all modes, execution/write/erase)

Standard programming time

(including erase) for byte/word/block

tprog (1 byte/4 bytes/128 bytes)

Fast programming time for 1 block

(128 bytes)

fCPU ≤ 24 MHz

2.95

5.5

V

6 6.6 ms

3 3.3 ms

terase

NRW

tRET

IDD

Erase time for 1 block (128 bytes)

Erase/write cycles(2)

(program memory)

Erase/write cycles (data memory)(2)

Data retention (program memory)

after 10 k erase/write cycles at

TA = 85 °C

Data retention (data memory) after 10

k erase/write cycles at TA = 85 °C

Data retention (data memory) after

300k erase/write cycles at

TA = 125 °C

Supply current (Flash programming or

erasing for 1 to 128 bytes)

TA = 85 °C

TA = 125 ° C

TRET = 55° C

TRET = 55° C

TRET = 85° C

3 3.3 ms

10 k

300 k 1M

cycles

20

20

years

1

2

mA

1. Data based on characterization results, not tested in production.

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a

write/erase operation addresses a single byte.

68/103

Doc ID 14733 Rev 12

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