STPS60L45CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS60L45CW Datasheet PDF : 4 Pages
| |||
STPS60L45CW
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
Per diode
Total
Coupling
Value
0.75
0.42
0.1
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Reverse leakage cur-
rent
Forward voltage drop
Pulse test : * tp = 380 µs, δ < 2%
Tests Conditions
Tj = 25°C
VR = 45 V
Tj = 125°C
Tj = 25°C
IF = 30 A
Tj = 125°C
IF = 30 A
Tj = 25°C
IF = 60 A
Tj = 125°C
IF = 60 A
Min. Typ. Max. Unit
1.5 mA
175 350
0.55 V
0.44 0.5
0.73
0.64 0.72
To evaluate the conduction losses use the following equation :
P = 0.28 x IF(AV) + 0.0073 IF2(RMS)
Fig. 1: Average forward power dissipation
versus average forward current (per diode).
Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
22
IF(av)(A)
35
20
δ = 0.1 δ = 0.2
δ = 0.5
18
δ = 0.05
30
δ=1
16
25
14
12
20
Rth(j-a)=Rth(j-c)
10
15
Rth(j-a)=15°C/W
8
6
T
10
T
4
2
IF(av) (A)
δ=tp/T
tp
0
0 5 10 15 20 25 30 35 40
5
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100 125 150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
2/4
Share Link: 