STPS30H100DJF-TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS30H100DJF-TR Datasheet PDF : 10 Pages
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Characteristics
STPS30H100DJF
1
Characteristics
Table 2: Absolute ratings (limiting values, anode terminals short circuited)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ = 0.5, square wave
100
45
TC = 100 °C
30
IFSM
PARM
VARM
Tstg
Tj
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak avalanche power
tp = 10 μs, Tj = 125 °C
Maximum repetitive peak avalanche
voltage
tp < 1 μs, Tj < 150 °C,
IAR < 9.3A
Storage temperature range
Operating junction temperature range(1)
250
265
120
-65 to +175
150
Unit
V
A
A
A
W
V
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Junction to case
Table 3: Thermal parameters
Parameter
Value
2
Unit
°C/W
Symbol
IR(1)
VF(1)
Table 4: Static electrical characteristics (anode terminals short circuited)
Parameter
Test conditions
Min. Typ. Max.
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 30 A
-
6
-
2.5 6.5
-
0.76
- 0.56 0.62
-
0.84
- 0.63 0.71
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.60 x IF(AV) + 0.00367 x IF2(RMS)
2/10
DocID023024 Rev 2
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