STGD5NB120SZ-1 View Datasheet(PDF) - STMicroelectronics
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Description
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STGD5NB120SZ-1 Datasheet PDF : 13 Pages
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STGD5NB120SZ-1 - STGD5NB120SZ
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
Test Conditions
gfs
Forward Transconductance VCE = 25 V , IC = 5 A
Cies(*) Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0V
Coes(*) Output Capacitance
Cres(*)
Reverse Transfer
Capacitance
Rg
Gate Resistance
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Min.
Table 7: Switching On
Symbol
Parameter
td(on)
tr
(di/dt)on
Delay Time
Current Rise Time
Turn-on Current Slope
td(on)
tr
(di/dt)on
Dealy Time
Current Rise Time
Turn-on Current Slope
Test Conditions
IC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive = 1KΩ
Tj = 25°C
ICC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive = 1KΩ
Tj = 125°C
Min.
Typ.
5
430
40
7
4
Typ.
690
170
39.6
600
185
39
Max.
Max.
Unit
S
pF
pF
pF
KΩ
Unit
ns
ns
A/µs
ns
ns
A/µs
Table 8: Switching Off
Symbol
Parameter
tc
tr(Voff)
td(off)
tf
Cross-over Time
Off Voltage Rise Time
Delay Time
Current Fall Time
tc
tr(Voff)
td(off)
tf
Cross-over Time
Off Voltage Rise Time
Delay Time
Current Fall Time
Test Conditions
IC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive = 1KΩ
Tj = 25°C
IC = 5 A , VCC = 960 V
VGE = 15 V , Rdrive = 1KΩ
Tj = 125°C
Min.
Table 9: Switching Energy
Symbol
Parameterr
Test Conditions
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 18)
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 18)
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2.
(3) Turn-off losses include also the tail of the collector current.
Min.
Typ. Max. Unit
4
µs
2.2
µs
12.1
µs
1.13
µs
5
µs
2.2
µs
12.1
µs
2
µs
Typ. Max Unit
2.59
mJ
9
mJ
11.59
mJ
2.64
mJ
10.2
mJ
12.68
mJ
3/13
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