dsPIC33FJXXXGPX06/X08/X10
TABLE 25-12: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
Param
No.
Symbol
Characteristic
Min Typ(1) Max Units
Conditions
Program Flash Memory
D130a EP
Cell Endurance
100 1000 — E/W See Note 2
D131 VPR VDD for Read
VMIN —
3.6
V VMIN = Minimum operating
voltage
D132B VPEW VDD for Self-Timed Write
VMIN —
3.6
V VMIN = Minimum operating
voltage
D134 TRETD Characteristic Retention
20
—
— Year Provided no other specifications
are violated
D135 IDDP
Supply Current during
Programming
—
10
— mA
D136a TRW Row Write Time
1.32 — 1.74 ms TRW = 11064 FRC cycles,
See Note 2
D137a TPE
Page Erase Time
20.1 — 26.5 ms TPE = 168517 FRC cycles,
See Note 2
D138a TWW Word Write Cycle Time
42.3 — 55.9 µs TWW = 355 FRC cycles,
See Note 2
Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
2: Other conditions: FRC = 7.37 MHz, TUN<5:0> = b'011111 (for Min), TUN<5:0> = b'100000 (for Max).
This parameter depends on the FRC accuracy (see Table 25-19) and the value of the FRC Oscillator
Tuning register (see Register 9-4). For complete details on calculating the Minimum and Maximum time
see Section 5.3 “Programming Operations”.
TABLE 25-13: INTERNAL VOLTAGE REGULATOR SPECIFICATIONS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
Param
No.
Symbol
Characteristics
Min Typ Max Units
Comments
CEFC
External Filter Capacitor
Value
4.7
10
—
μF Capacitor must be low
series resistance
(< 5 ohms)
© 2009 Microchip Technology Inc.
DS70286C-page 265