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STM32F091VB View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F091VB Datasheet PDF : 128 Pages
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Electrical characteristics
STM32F091xB STM32F091xC
6.3
Operating conditions
6.3.1 General operating conditions
Table 24. General operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
fHCLK
Internal AHB clock frequency
-
fPCLK
Internal APB clock frequency
-
0
48
MHz
0
48
VDD
Standard operating voltage
-
2.0
3.6
V
VDDIO2
I/O supply voltage
Must not be supplied if VDD
is not present
1.65
3.6
V
VDDA
Analog operating voltage
(ADC and DAC not used)
Analog operating voltage
(ADC and DAC used)
Must have a potential equal
VDD
to or higher than VDD
2.4
3.6
3.6
V
VBAT
VIN
Backup operating voltage
I/O input voltage
-
TC and RST I/O
TTa I/O
FT and FTf I/O
1.65
3.6
V
-0.3 VDDIOx+0.3
-0.3 VDDA+0.3(1)
V
-0.3
5.5(1)
UFBGA100
-
364
LQFP100
-
476
Power dissipation at TA = 85 °C LQFP64
PD
for suffix 6suofrfiTxA7=(2)105 °C for
WLCSP64
UFBGA64
-
455
-
377
mW
-
308
LQFP48
-
370
UFQFPN48
-
625
Ambient temperature for the
Maximum power dissipation –40
85
suffix 6 version
Low power dissipation(3)
–40
105
°C
TA
Ambient temperature for the
Maximum power dissipation –40
105
suffix 7 version
Low power dissipation(3)
–40
125
°C
Suffix 6 version
TJ
Junction temperature range
Suffix 7 version
–40
105
°C
–40
125
1. For operation with a voltage higher than VDDIOx + 0.3 V, the internal pull-up resistor must be disabled.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. See Section 7.8: Thermal characteristics
3.
In low power dissipation state,
Thermal characteristics).
TA
can
be
extended
to
this
range
as
long
as
TJ
does
not
exceed
TJmax
(see
Section
7.8:
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 25 are derived from tests performed under the ambient
temperature condition summarized in Table 24.
54/128
DocID026284 Rev 4

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