IRF740 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
Manufacturer
IRF740 Datasheet PDF : 2 Pages
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IRF740
N-Channel Power MOSFET
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Min
400
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
0.4
4.0
1570
230
55
25
37
75
31
46
10
23
4.5
Max
-
0.25
1.0
100
-100
4.0
0.55
-
-
-
-
-
-
-
-
63
-
-
-
Unit
V
mA
nA
V
Ω
S
Test Conditions
VGS=0V, ID=250µA
VDS=400V, VGS=0V
VDS=320V, VGS=0V, TJ=125oC
VGSF=20V, VDS=0V
VGSR=-20V, VDS=0V
VDS=VGS, ID=250µA
VGS=10V, ID=5.0A(Note)
VDS= 15V, ID=5.0A(Note)
pF VDS=25V, VGS=0V, f=1.0MHz
ns
VDD=200V, ID=10A,
VGS=10V, RG=10Ω(Note)
nC VDS=320V, ID=10A, VGS=10V(Note)
nH
Measured from the drain lead 0.25"
from package to center of die
Internal Source Inductance
LS
-
7.5
-
nH
Measured from the source lead 0.25"
from package to source bond pad
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Forward Turn-On Time
ton
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2%
-
-
2.0
V IS=10A, VGS=0V(Note)
-
250
-
ns IF=10A, di/dt=100A/µs(Note)
Intrinsic turn-on time is neglegible and dominated by inductance LS+LD
-
-
1.0
oC/W -
-
-
62.5
DC COMPONENTS CO., LTD.
R
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