M24C01-FDW6G View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M24C01-FDW6G

1-Kbit and 2-Kbit serial I²C bus EEPROMs

STMicroelectronics 

M24C01/02-W M24C01/02-R M24C02-F

DC and AC parameters

Table 9. AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

Cbus

Load capacitance

SCL input rise/fall time, SDA input fall time

100

pF

-

50

ns

Input levels

Input and output timing reference levels

0.2 VCC to 0.8 VCC

V

0.3 VCC to 0.7 VCC

V

Figure 9. AC measurement I/O waveform

Input voltage levels

0.8VCC

0.2VCC

Input and output

Timing reference levels

0.7VCC

0.3VCC

MS19774V1

Symbol

Table 10. Input parameters

Parameter(1)

Test condition

CIN

Input capacitance (SDA)

CIN

Input capacitance (other pins)

ZL

Input impedance (WC)

ZH

1. Characterized only, not tested in production.

-

-

VIN < 0.3 VCC

VIN > 0.7 VCC

Min. Max. Unit

-

8

pF

-

6

pF

15 70 kΩ

500 -

kΩ

Symbol Parameter

Table 11. Cycling performance

Test condition(1)

Ncycle

Write cycle

endurance

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

TA = 85 °C, VCC(min) < VCC < VCC(max)

1. Cycling performance for products identified by process letter T.

Max.

4,000,000

1,200,000

Unit

Write cycle

Table 12. Memory cell data retention

Parameter

Data retention(1)

Test condition

TA = 55 °C

Min.

200

Unit

Year

1. For products identified by process letter T. The data retention behavior is checked in production, while the

200-year limit is defined from characterization and qualification results.

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