M24C02-WDW6G View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M24C02-WDW6G Datasheet PDF : 34 Pages
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DC and AC parameters
M24C01/02-W M24C01/02-R M24C02-F
Symbol
Table 13. DC characteristics (M24C01/02-W, device grade 6)
Parameter
Test conditions (in addition to those
in Table 5 and Table 9)
Min.
Max. Unit
ILI
Input leakage current VIN = VSS or VCC, device in Standby
(SCL, SDA, E2, E1) mode
-
±2
µA
ILO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: VSS or VCC
ICC
Supply current (Read) VCC = 5.5 V, fc = 400 kHz
VCC = 2.5 V, fc = 400 kHz
ICC0 Supply current (Write) During tW, 2.5 V ≤ VCC ≤ 5.5 V
ICC1
Standby supply
current
Device not selected(3),
VIN = VSS or VCC, VCC = 2.5 V
Device not selected(3),
VIN = VSS or VCC, VCC = 5.5 V
VIL
Input low voltage
(SCL, SDA, WC)
-
-
±2
µA
-
1(1)
mA
-
1
mA
-
0.5(2) mA
-
2(4)
µA
-
3(4)
µA
–0.45 0.3 VCC V
VIH
Input high voltage
(SCL, SDA, WC)
-
0.7 VCC VCC +1 V
VOL Output low voltage
IOL = 2.1 mA, VCC = 2.5 V or
IOL = 3 mA, VCC = 5.5 V
-
0.4
V
1. 2 mA for devices identified by process letter G or S.
2.
For devices
production).
identified
by
process
letter
T,
value
averaged
over
tW,
characterized
only
(not
tested
in
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).
4. 1 µA for previous devices identified by process letters G or S.
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