STP8NC50FP(1999) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP8NC50FP
(Rev.:1999)

N - CHANNEL 500V - 0.7 Ω - 8 A TO-220/TO-220FP PowerMESH™ Ι MOSFET

STMicroelectronics 

STP8NC50

®

STP8NC50FP

N - CHANNEL 500V - 0.7 Ω - 8 A TO-220/TO-220FP

PowerMESH™ΙΙ MOSFET

TYPE

VDSS

RDS(on)

ID

ST P8NC5 0

500 V < 0.85 Ω

8A

ST P8NC5 0FP

500 V < 0.85 Ω

8A

s TYPICAL RDS(on) = 0.7 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK

s GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™ΙΙ is the evolution of the first

generation of MESH OVERLAY™. The layout

refinements introduced greatly improve the

Ron*area figure of merit while keeping the device

at the leading edge for what concerns switching

speed, gate charge and ruggedness.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

P a ramet er

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gat e Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM (•) Drain Current (pulsed)

Ptot T otal Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

VISO Insulation Withstand Voltage (DC)

Ts tg Storage Temperat ure

Tj Max. Operating Junction T emperature

(•) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

December 1999

Va l u e

ST P8NC50 STP8NC50F P

500

500

± 30

8

8(*)

5.4

5.4(*)

32

32

135

40

1.0

0.32

3

3



2000

-65 to 150

150

( 1) ISD ≤ 8 A, di/dt ≤200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Un it

V

V

V

A

A

A

W

W /o C

V/ns

V

oC

oC

1/9

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