STPS10170CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS10170CR Datasheet PDF : 10 Pages
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STPS10170C
Characteristics
Figure 1.
Conduction losses versus average Figure 2.
forward current (per diode)
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(AV)(W)
5
4
3
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
2
T
1
IF(AV)(A)
δ=tp/T
tp
0
0
1
2
3
4
5
6
IF(AV)(A)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
T
1.0
0.5
δ=tp/T
tp
0.0
0
25
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
IM(A)
80
70
60
50
40
30
20
IM
10
0
1.E-03
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
t
δ =0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance, junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AB
DPAK
I²PAK
D²PAK
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
3/10
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