STM8AF6228TD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8AF6228TD

Automotive 8-bit MCU, with up to32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5V

STMicroelectronics 

Electrical characteristics

STM8AF61xx, STM8AF62xx

HSE oscillator critical gm formula

The crystal characteristics have to be checked with the following formula:

10.3.4

gm » gmcrit

where gmcrit can be calculated with the crystal parameters as follows:

gmcrit = (2 × Π × fHSE)2 × Rm(2Co + C)2

Rm: Notional resistance (see crystal specification)

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)

CL1 = CL2 = C: Grounded external capacitance

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA.

High speed internal RC oscillator (HSI)

Table 32. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min Typ Max Unit

fHSI

Frequency

-

16

-

MHz

HSI oscillator user

trimming accuracy

ACCHS

Trimmed by the application -1(1)

-

1(1)

for any VDD and TA

conditions

-0.5(1)

-

0.5(1)

%

HSI oscillator accuracy

(factory calibrated)

VDD = 3.0 V ≤ VDD ≤ 5.5 V,

-40 °C ≤ TA ≤ 150 °C

-5

-

5

tsu(HSI) HSI oscillator wakeup time

-

-

2(2)

µs

1. Depending on option byte setting (OPT3 and NOPT3)

2. Guaranteed by characterization, not tested in production

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Doc ID 14952 Rev 6

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