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STM8AF6268TC View Datasheet(PDF) - STMicroelectronics

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STM8AF6268TC Datasheet PDF : 89 Pages
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Electrical characteristics
STM8AF61xx, STM8AF62xx
Electromagnetic interference (EMI)
Emission tests conform to the SAE J 1752/3 standard for test software, board layout and pin
loading.
Table 45. EMI data
Conditions
Symbol
Parameter
General conditions
Monitored
frequency band
Max fCPU(1)
8
16
MHz MHz
Unit
SEMI
Peak level
VDD = 5 V,
0.1 MHz to 30 MHz 15
TA = 25 °C,
30 MHz to 130 MHz 18
LQFP80 package
conforming to SAE J 130 MHz to 1 GHz
-1
SAE EMI level 1752/3
2
17
22
dBµV
3
2.5
1. Data based on characterization results, not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 46. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
Class value(1) Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA = 25°C, conforming to
JESD22-A114
3A
4000
VESD(CDM)
Electrostatic discharge voltage
(Charge device model)
TA= 25°C, conforming to
JESD22-C101
3
500
V
VESD(MM)
Electrostatic discharge voltage
(Machine model)
TA= 25°C, conforming to
JESD22-A115
B
200
1. Data based on characterization results, not tested in production
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Doc ID 14952 Rev 6

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