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DSPIC33FJ64GP204T-I/SO View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
DSPIC33FJ64GP204T-I/SO
Microchip
Microchip Technology 
DSPIC33FJ64GP204T-I/SO Datasheet PDF : 402 Pages
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dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04
TABLE 31-5: DC CHARACTERISTICS: DOZE CURRENT (IDOZE)
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C TA +140°C for High Temperature
Parameter
No.
Typical(1)
Max
Doze
Ratio
Units
Conditions
HDC72a
39
45
1:2
mA
HDC72f
18
25
1:64
mA +140°C
3.3V
20 MIPS
HDC72g
18
25
1:128
mA
Note 1: Parameters with Doze ratios of 1:2 and 1:64 are characterized, but are not tested in manufacturing.
TABLE 31-6: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C TA +140°C for High Temperature
Param
No.
Symbol
Characteristic
Min
Typ Max Units
Conditions
VOL
HDO10
HDO16
VOH
HDO20
HDO26
Output Low Voltage
I/O ports
OSC2/CLKO
Output High Voltage
I/O ports
OSC2/CLKO
2.40
2.41
— 0.4
— 0.4
V IOL = 1 mA, VDD = 3.3V
V IOL = 1 mA, VDD = 3.3V
V IOH = -1 mA, VDD = 3.3V
V IOH = -1 mA, VDD = 3.3V
TABLE 31-7: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C TA +140°C for High Temperature
Param
No.
Symbol
Characteristic(1)
Min Typ Max Units
Conditions
HD130 EP
Program Flash Memory
Cell Endurance
10,000 —
E/W -40C to +140C(2)
HD134 TRETD Characteristic Retention
20
— Year 1000 E/W cycles or less and no
other specifications are violated
Note 1: These parameters are assured by design, but are not characterized or tested in manufacturing.
2: Programming of the Flash memory is not allowed above 125°C.
2009 Microchip Technology Inc.
Preliminary
DS70292D-page 369

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