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DSPIC33FJ128GP204T-H/SO View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
DSPIC33FJ128GP204T-H/SO
Microchip
Microchip Technology 
DSPIC33FJ128GP204T-H/SO Datasheet PDF : 402 Pages
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dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04
5.0 FLASH PROGRAM MEMORY
Note 1: This data sheet summarizes the features
of the dsPIC33FJ32GP302/304,
dsPIC33FJ64GPX02/X04,
and
dsPIC33FJ128GPX02/X04 families of
devices. It is not intended to be a compre-
hensive reference source. To comple-
ment the information in this data sheet,
refer to “Section 5. Flash Program-
ming” (DS70191) of the “dsPIC33F/
PIC24H Family Reference Manual”,
which is available from the Microchip
website (www.microchip.com).
2: Some registers and associated bits
described in this section may not be avail-
able on all devices. Refer to Section 4.0
“Memory Organization” in this data
sheet for device-specific register and bit
information.
The dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/
X04, and dsPIC33FJ128GPX02/X04 devices contain
internal Flash program memory for storing and
executing application code. The memory is readable,
writable and erasable during normal operation over the
entire VDD range.
Flash memory can be programmed in two ways:
• In-Circuit Serial Programming™ (ICSP™)
programming capability
• Run-Time Self-Programming (RTSP)
ICSP allows any of the following devices,
dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04,
and dsPIC33FJ128GPX02/X04, to be serially pro-
grammed while in the end application circuit. This is
done with two lines for programming clock and
programming data (one of the alternate programming
pin pairs: PGECx/PGEDx), and three other lines for
power (VDD), ground (VSS) and Master Clear (MCLR).
This allows customers to manufacture boards with
unprogrammed devices and then program the digital
signal controller just before shipping the product. This
also allows the most recent firmware or a custom firm-
ware to be programmed.
RTSP is accomplished using TBLRD (table read) and
TBLWT (table write) instructions. With RTSP, the user
application can write program memory data either in
blocks or ‘rows’ of 64 instructions (192 bytes) at a time
or a single program memory word, and erase program
memory in blocks or ‘pages’ of 512 instructions (1536
bytes) at a time.
5.1 Table Instructions and Flash
Programming
Regardless of the method used, all programming of
Flash memory is done with the table read and table
write instructions. These allow direct read and write
access to the program memory space from the data
memory while the device is in normal operating mode.
The 24-bit target address in the program memory is
formed using bits <7:0> of the TBLPAG register and the
Effective Address (EA) from a W register specified in
the table instruction, as shown in Figure 5-1.
The TBLRDL and the TBLWTL instructions are used to
read or write to bits <15:0> of program memory.
TBLRDL and TBLWTL can access program memory in
both Word and Byte modes.
The TBLRDH and TBLWTH instructions are used to read
or write to bits <23:16> of program memory. TBLRDH
and TBLWTH can also access program memory in Word
or Byte mode.
FIGURE 5-1:
ADDRESSING FOR TABLE REGISTERS
24 bits
Using
0
Program Counter
0
Program Counter
Using
Table Instruction
1/0 TBLPAG Reg
8 bits
Working Reg EA
16 bits
User/Configuration
Space Select
24-bit EA
Byte
Select
2009 Microchip Technology Inc.
Preliminary
DS70292D-page 73

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