STP11NB40FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP11NB40FP Datasheet PDF : 9 Pages
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STP11NB40/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 200 V ID = 5.3 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 320 V ID = 10.7 A VGS = 10 V
Min.
T yp.
17
10
29
10.6
11.8
Max.
25
15
41
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 320 V ID = 10.7 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
T yp.
10
10
17
Max.
14
14
25
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 10.7 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 10. 7 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
10.7
42.8
Unit
A
A
1.6
V
400
ns
3.4
µC
17
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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