STP4NA80 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP4NA80

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STP4NA80

STP4NA80FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

STP4NA80

STP4NA80FI

VDSS

800 V

800 V

RDS(on)

<3Ω

<3Ω

ID

4A

2.5 A

s TYPICAL RDS(on) = 2.4 Ω

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW INTRINSIC CAPACITANCES

s GATE GHARGE MINIMIZED

s REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the

most advanced high voltage technology. The

optimized cell layout coupled with a new

proprietary edge termination concur to give the

device low RDS(on) and gate charge, unequalled

ruggedness and superior switching performance.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR Drain-gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

Tstg Storage Temperature

Tj Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

February 1994

3

2

1

TO-220

3

2

1

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

Value

STP4NA80

STP4NA80FI

800

800

± 30

4

2.5

2.5

1.6

16

16

110

45

0.88

0.36



2000

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

V

oC

oC

1/10

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