MLN1027SS(RevB) View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
Manufacturer
MLN1027SS Datasheet PDF : 1 Pages
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MLN1027SS
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1027SS is Designed
for Class A, Linear Applications up to
1.0 GHz.
FEATURES:
• Class A Operation
• PG = 11 dB at 0.5 W/1.0 GHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
1.0 A
VCB
60 V
VCE
35 V
PDISS
140 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
25 °C/W
PACKAGE STYLE .205 4L STUD
D
A
C
B
G
E
H
F
# 8 -3 2U N C
J
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.161 / 4.100
.098 / 2.500
.200 / 5.100
.004 / 0.100
.425 / 10.800
.200 / 5.100
.138 / 3.500
M A X IM UM
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.208 / 5.300
.006 / 0.150
.465 / 11.800
2.05 / 5.200
ORDER CODE: ASI10621
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
RBE = 10 Ω
BVEBO
IE = 10 mA
ICES
VCE = 28 V
hFE
VCE = 5.0 V
IC = 1.0 A
Cob
VCB = 28 V
f = 1.0 MHz
PG
VCE = 20 V
POUT = 0.5 W
ICQ = 100 mA
f = 1.0 GHz
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5.0
10
100
3.5
11
UNITS
V
V
V
mA
---
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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