2N2920
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions 1
Min.
INDIVIDUAL TRANSISTOR CHARACTERISTICS
V(BR)CBO Collector – Base Breakdown Voltage IC = 10mA
IE = 0
60
V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0
60
V(BR)EBO Emitter – Base Breakdown Voltage
IE = 10mA
IC = 0
6
ICBO
Collector Cut-off Current
VCB = 45V
IE = 0
TA = 150°C
ICEO
Collector Cut-off Current
VCE = 5V
IB = 0
IEBO
Emitter Cut-off Current
VEB = 5V
IC = 0
VCE = 5V
IC = 10mA
150
hFE
DC Current Gain
TA = –55°C
40
VCE = 5V
IC = 100mA
225
VCE = 5V
IC = 1mA
300
VBE
Base – Emitter Voltage
VCE = 5V
IC = 100mA
VCE(sat) Collector – Emitter Saturation Voltage IB = 100mA IC = 1mA
hib
Small Signal Common – Base
VCB = 5V IC = 1mA
25
Input Impedance
f = 1kHz
hob
Small Signal Common – Base
VCB = 5V IC = 1mA
Output Admittance
f = 1kHz
|hfe|
Small Signal Common – Base
VCE = 5V IC = 500mA
3
Current Gain
f = 20MHz
Cobo
Common – Base Open Circuit
Output Capacitance
* Pulse Test: tp = 300ms , d £ 1%.
VCB = 5V IE = 0
f = 140kHz to 1MHz
Typ.
Max. Unit
V
2
nA
10
mA
2
nA
2
600
—
0.70
V
0.35
32
W
1 mmho
—
6
pF
Parameter
Test Conditions
TRANSISTOR MATCHING CHARACTERISTICS
hFE1
Static Forward Current Gain
VCE = 5V
hFE2
Balance Ratio
See Note 2.
|VBE1 – VBE2| Base – Emitter Voltage Differential
|D(VBE1 – VBE2)DTA|
VCE = 5V
VCE = 5V
VCE = 5V
Base – Emitter Voltage Differential TA1 = 25°C
Change With Temperature
VCE = 5V
TA1 = 25°C
IC = 100mA
IC = 100mA
IC = 10mA to 1mA
IC = 100mA
TA2 = –55°C
IC = 100mA
TA2 = 125°C
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as hFE1.
Min.
0.9
Typ.
Max. Unit
1
—
3
mV
5
0.8
mV
1
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Prelim. 9/95