DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F100VCT6BTR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32F100VCT6BTR Datasheet PDF : 98 Pages
First Prev 31 32 33 34 35 36 37 38 39 40 Next Last
Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
Note:
5.3.2
Table 9. General operating conditions (continued)
Symbol
Parameter
Conditions
Min Max Unit
Power dissipation at TA =
PD
85 °C for suffix 6 or TA =
105 °C for suffix 7(2)
LQFP144
LQFP100
LQFP64
666
434 mW
444
Ambient temperature for 6
suffix version
Maximum power dissipation –40 85
Low power dissipation(3)
–40 105
°C
TA
Ambient temperature for 7
suffix version
Maximum power dissipation –40 105
Low power dissipation(3)
–40 125
°C
6 suffix version
TJ
Junction temperature range
7 suffix version
–40 105
°C
–40 125
1. When the ADC is used, refer to Table 51: ADC characteristics.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 6.2:
Thermal characteristics on page 92).
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Section 6.2: Thermal characteristics on page 92).
It is recommended to power VDD and VDDA from the same source. A maximum difference of
300 mV between VDD and VDDA can be tolerated during power-up and operation
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 10. Operating conditions at power-up / power-down
Symbol
Parameter
Min
Max
Unit
tVDD
VDD rise time rate
VDD fall time rate
0
µs/V
20
38/98
Doc ID 15081 Rev 7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]