DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F100ZD View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32F100ZD Datasheet PDF : 98 Pages
First Prev 51 52 53 54 55 56 57 58 59 60 Next Last
STM32F100xC, STM32F100xD, STM32F100xE
Electrical characteristics
Figure 16. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms
FSMC_NEx
tw(NE)
FSMC_NOE
FSMC_NWE
FSMC_A[25:0]
FSMC_NBL[1:0]
FSMC_D[15:0]
FSMC_NADV(1)
tv(NWE_NE)
tw(NWE)
tv(A_NE)
tv(BL_NE)
tv(Data_NE)
t v(NADV_NE)
tw(NADV)
th(A_NWE)
Address
th(BL_NWE)
NBL
th(Data_NWE)
Data
t h(NE_NWE)
ai14990
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
Table 31. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)
Symbol
Parameter
Min
Max
Unit
tw(NE)
FSMC_NE low time
3THCLK – 1 3THCLK + 2 ns
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low
THCLK – 0.5 THCLK + 1.5 ns
tw(NWE)
FSMC_NWE low time
THCLK – 0.5 THCLK + 1.5 ns
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK
ns
tv(A_NE)
FSMC_NEx low to FSMC_A valid
7.5
ns
th(A_NWE) Address hold time after FSMC_NWE high
THCLK
ns
tv(BL_NE)
FSMC_NEx low to FSMC_BL valid
1.5
ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high
THCLK – 0.5
ns
tv(Data_NE) FSMC_NEx low to Data valid
THCLK + 7
ns
th(Data_NWE) Data hold time after FSMC_NWE high
THCLK
ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low
5.5
ns
tw(NADV)
FSMC_NADV low time
THCLK + 1.5 ns
1. CL = 15 pF.
2. Preliminary values.
Doc ID 15081 Rev 7
57/98

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]