PIC16F946-ESP View Datasheet(PDF) - Microchip Technology
Part Name
Description
Manufacturer
PIC16F946-ESP
Microchip Technology
PIC16F946-ESP Datasheet PDF : 330 Pages
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PIC16F913/914/916/917/946
19.3 DC Characteristics: PIC16F913/914/916/917/946-I (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Device Characteristics
Min.
Typ†
Max.
Units
VDD
Conditions
Note
D020 Power-down Base
Current(IPD)(2)
— 0.05 1.2
μA
2.0 WDT, BOR, Comparators, VREF and
— 0.15 1.5
μA
3.0 T1OSC disabled
— 0.35 1.8
μA
5.0
D021
— 150 500 nA
— 1.0 2.2 μA
3.0 -40°C ≤ TA ≤ +25°C
2.0 WDT Current(1)
— 2.0 4.0
μA
3.0
D022A
— 3.0 7.0
μA
5.0
—
42
60
μA
3.0 BOR Current(1)
—
85 122 μA
5.0
D022B
—
22
28
μA
2.0 PLVD Current
—
25
35
μA
3.0
D023
—
33
45
μA
5.0
—
32
45
μA
2.0 Comparator Current(1), both
—
60
78
μA
3.0 comparators enabled
D024
— 120 160 μA
—
30
36
μA
5.0
2.0 CVREF Current(1) (high range)
—
45
55
μA
3.0
D025*
—
75
95
μA
5.0
—
39
47
μA
2.0 CVREF Current(1) (low range)
—
59
72
μA
3.0
D026
—
98
124
μA
— 2.0 5.0 μA
5.0
2.0 T1OSC Current(1), 32.768 kHz
— 2.5 5.5
μA
3.0
D027
— 3.0 7.0
μA
5.0
— 0.30 1.6
μA
3.0 A/D Current(1), no conversion in
— 0.36 1.9
μA
5.0 progress
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
© 2007 Microchip Technology Inc.
DS41250F-page 259
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