BUV48C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BUV48C Datasheet PDF : 6 Pages
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BUX48C/BUV48C/BUV48CFI
THERMAL DATA
Rthj-ca se Thermal Resist ance Junction-case Max
TO -3
1
T O-218
1
IS OW ATT 218
2.2
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Conditions
I CE R
ICES
ICEO
Collector Cut-off Current
(RBE = 10 Ω)
Collector Cut-off Current
(VBE = 0)
Collector Cut-off Current
(IB = 0)
VCE = 1200 V
VCE = 1200 V
VCE = 1200 V
VCE = 1200 V
VCE = VCEO
Tcase = 125 oC
Tcase = 125 oC
IEBO Emitt er Cut -off Current
(IC = 0)
VCEO(SUS) ∗ Collector-Emit ter Sustaining
Voltage (IB = 0)
VCER(SUS) ∗ Collector-Emit ter Sustaining
Voltage (RBE = 10 Ω)
VCE(sat)∗ Collector-Emit ter Saturation
V o lt a ge
VBE(s at)∗ Base-Emitt er Sat uration
V o lt a ge
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VEB = 6 V
IC = 100 mA
IC = 0.5 A Vc la mp = 1200 V
L = 2 mH
IC = 6 A IB = 1.5 A
IC = 10 A IB = 4 A
IC = 6 A IB = 1.5 A
IC = 10 A IB = 4 A
Min.
700
1200
Typ.
Max.
500
4
500
3
1
1
1.5
3
1.5
2
Unit
µA
mA
µA
mA
mA
mA
V
V
V
V
V
V
RESISTIVE SWITCHING TIMES
Symb ol
ton
ts
tf
Parameter
Turn-on Time
Storage Time
Fall Time
Test Conditions
VCC = 250 V
IB1 = - IB2 = 1.5 A
IC = 6 A
Min.
Typ.
0.5
1.5
0.2
M a x.
1
3
0.7
Unit
µs
µs
µs
INDUCTIVE SWITCHING TIMES
Symb ol
ts
tf
ts
Parameter
Storage Time
Fall Time
Storage Time
tf
Fall Time
Test Conditions
VCC = 250 V
IB1 = - IB2 = 1.5 A
IC = 6 A
VCC = 250 V
IB1 = - IB2 = 1.5 A
TC = 125 oC
IC = 6 A
Min.
Typ.
2
0.15
3
0.33
M a x.
6
0.60
Unit
µs
µs
µs
µs
2/6
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