BAS86 View Datasheet(PDF) - Semtech Electronics LTD.
Part Name
Description
Manufacturer
BAS86 Datasheet PDF : 3 Pages
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BAS86
SCHOTTKY BARRIER DIODE
Ultra High-Speed Switching, Voltage Clamping
Protection Circuits and Blocking Applications
Features
• Low forward voltage.
• Guard ring protected.
• Hermetically-sealed leaded glass package.
• High breakdown voltage.
LL34
Absolute Maximum Ratings (Ta = 25oC)
Parameter
Continuous reverse voltage
Continuous forward current
Average forward current
Repetitive peak forward current tp≦1sec.; δ≦0.5
Non-repetitive peak forward current tp=10ms
Operating ambient temperature
Junction temperature
Storage temperature range
Thermal resistance from junction to ambient
Symbol
VR
IF
IF(AV)
IFRM
IFSM
Tamb
Tj
TS
Rthj-a
Characteristics at Ta = 25oC
Parameter
Forward voltage
at IF = 0.1mA
at IF = 1mA
at IF = 10mA
at IF = 30mA
at IF = 100mA
Reverse current (Note 1)
at VR = 40V
Reverse recovery time
at IF = 10mA, IR = 10mA, RL = 100Ω
Diode capacitance
at VR = 1V, f = 1MHz
Note 1: Pulsed test: tp=300μs; δ=0.02.
Symbol
VF
VF
VF
VF
VF
IR
trr
Cd
Min.
-
-
-
-
-
-
-
-
Limits
Unit
50
V
200
mA
200
mA
500
mA
5
A
-65 to +125
℃
125
℃
-65 to +150
℃
320
K/W
Typ.
Max.
Unit
-
300
mV
-
380
mV
-
450
mV
-
600
mV
-
900
mV
-
5
μA
-
4
ns
-
8
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/03/2005
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