DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STP80NE03L-06 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP80NE03L-06 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
®
STP80NE03L-06
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE” POWER MOSFET
TYPE
VDSS
RDS(on)
STP80NE03L-06 30 V < 0.006
s TYPICAL RDS(on) = 0.005
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
80 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
February 2000
Va l u e
Un it
30
V
30
V
± 22
V
80
A
60
A
320
A
150
W
1
W /o C
7
V/ns
-65 to 175
oC
175
oC
( 1) ISD 80 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
1/8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]