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STM32L152VBH6D(2013) View Datasheet(PDF) - STMicroelectronics

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STM32L152VBH6D Datasheet PDF : 121 Pages
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STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
Table 18.
Symbol
Current consumption in Run mode, code with data processing running from RAM
Parameter
Conditions
fHCLK
Max(1)
Typ
Unit
55 °C 85 °C 105 °C
IDD (Run
from
RAM)
Supply current
in Run mode,
code executed
from RAM,
Flash switched
off
fHSE = fHCLK
up to 8 MHz,
included
fHSE = fHCLK/2
above 8 MHz
(PLL ON)(2)
HSI clock source
(16 MHz)
Range 3,
VCORE=1.2 V
VOS[1:0] = 11
Range 2,
VCORE=1.5 V
VOS[1:0] = 10
Range 1,
VCORE=1.8 V
VOS[1:0] = 01
Range 2,
VCORE=1.5 V
VOS[1:0] = 10
Range 1,
VCORE=1.8 V
VOS[1:0] = 01
MSI clock, 65 kHz Range 3,
MSI clock, 524 kHz VCORE=1.2 V
MSI clock, 4.2 MHz VOS[1:0] = 11
1 MHz 200 300
2 MHz 380 500
4 MHz 720 860
4 MHz 0.9 1
8 MHz 1.65 2
16 MHz 3.2 3.7
8 MHz 2 2.5
16 MHz 4 4.5
32 MHz 7.7 8.5
300 300
500 500 µA
860 860(3)
1
1
2
2
3.7 3.7
2.5 2.5
4.5 4.5
8.5 8.5 mA
16 MHz 3.3 3.8 3.8 3.8
32 MHz 7.8 9.2 9.2 9.2
65 kHz 40 60 60 80
524 kHz 110 140 140 160 µA
4.2 MHz 700 800 800 820
1. Based on characterization, not tested in production, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).
3. Tested in production.
Doc ID 17659 Rev 8
55/121

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