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STM32F301R8U7 View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F301R8U7 Datasheet PDF : 135 Pages
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STM32F301x6 STM32F301x8
Electrical characteristics
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Symbol
Table 47. Flash memory characteristics
Parameter
Conditions
Min
tprog 16-bit programming time TA = –40 to +105 °C
40
tERASE Page (2 KB) erase time TA = –40 to +105 °C
20
tME Mass erase time
TA = –40 to +105 °C
20
Write mode
-
IDD Supply current
Erase mode
-
1. Guaranteed by design.
Typ Max(1) Unit
53.5 60
µs
-
40
ms
-
40
ms
-
10 mA
-
12 mA
Table 48. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Min(1)
NEND Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
1 kcycle(2) at TA = 85 °C
30
tRET Data retention
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
Unit
kcycles
Years
DocID025146 Rev 6
81/135
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