BYV52/PI View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BYV52/PI Datasheet PDF : 6 Pages
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BYV52/PI
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
SOT93
Per diode
1.2
°C/W
Total
0.75
TOP3I
Per diode
1.8
Total
1.2
Rth (c) Coupling
SOT93
0.3
°C/W
TOP3I
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
Test Conditions
0.6
Min. Typ. Max. Unit
IR *
Tj = 25°C
VR = VRRM
25 µA
Tj = 100°C
2.5 mA
VF **
Tj = 125°C
IF = 20 A
0.85 V
Tj = 125°C
IF = 40 A
1.00
Tj = 25°C
IF = 40 A
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.0075 x IF2(RMS)
1.15
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
Test Conditions
IF = 0.5A
IR = 1A
Irr = 0.25A
Min. Typ. Max. Unit
35 ns
IF = 1A
dIF/dt = -50A/µs
50
VR = 30V
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 5 ns
10
ns
VFP
Tj = 25°C
IF = 1A
tr = 5 ns
1.5
V
2/6
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