DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PIC16F1454T-IP View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
PIC16F1454T-IP Datasheet PDF : 418 Pages
First Prev 361 362 363 364 365 366 367 368 369 370 Next Last
PIC16(L)F1454/5/9
29.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C TA +125°C
Param
No.
Sym.
D110
D111
VIHH
IDDP
D112
D113
VBE
VPEW
Characteristic
Program Memory
Programming Specifications
Voltage on MCLR/VPP pin
Supply Current during
Programming
VDD for Bulk Erase
VDD for Write or Row Erase
Min. Typ† Max. Units
Conditions
8.0
9.0
V (Note 2)
10
mA
2.7
VDDMAX V
VDDMIN
VDDMAX V
D114 IPPPGM Current on MCLR/VPP during
Erase/Write
1.0
mA
D115 IDDPGM Current on VDD during Erase/
Write
5.0
mA
Program Flash Memory
D121 EP
Cell Endurance
10K
E/W -40C to +85C (Note 1)
D122 VPRW VDD for Read/Write
VDDMIN
VDDMAX
V
D123 TIW Self-timed Write Cycle Time
2
2.5
ms
D124 TRETD Characteristic Retention
40
Year Provided no other
specifications are violated
D125 EHEFC High-Endurance Flash Cell
100K
E/W 0°C to +60°C lower byte,
last 128 addresses
Note 1:
2:
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Self-write and Block Erase.
Required only if single-supply programming is disabled.
2012 Microchip Technology Inc.
Preliminary
DS41639A-page 363

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]