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STM32F038C6U6TR View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F038C6U6TR Datasheet PDF : 102 Pages
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Electrical characteristics
STM32F038x6
6.3.3
6.3.4
Symbol
tVDD
tVDDA
Table 19. Operating conditions at power-up / power-down
Parameter
Conditions
Min
Max
VDD rise time rate
VDD fall time rate
VDDA rise time rate
VDDA fall time rate
0
∞
-
20
∞
0
∞
-
20
∞
Unit
µs/V
Embedded reference voltage
The parameters given in Table 20 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 18: General operating
conditions.
Table 20. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ Max Unit
VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.2 1.23 1.25
V
tSTART
ADC_IN17 buffer startup
time
-
-
- 10(1)
µs
ADC sampling time when
tS_vrefint reading the internal
-
reference voltage
4(1)
-
-
µs
∆VREFINT
Internal reference voltage
spread over the
temperature range
VDDA = 3 V
-
-
10(1)
mV
TCoeff
Temperature coefficient
-
- 100(1) - 100(1) ppm/°C
TVREF(2IN) T_RDY
Internal reference voltage
temporization
-
1.5 2.5 4.5
ms
1. Guaranteed by design, not tested in production.
2. Guaranteed by design, not tested in production. This parameter is the latency between the time when pin
NPOR is set to 1 by the application and the time when the VREFINTRDYF status bit is set to 1 by the
hardware.
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 12: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
42/102
DocID026079 Rev 5

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