S25FL256SAGNFN200 View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
S25FL256SAGNFN200
Cypress Semiconductor
S25FL256SAGNFN200 Datasheet PDF : 144 Pages
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S25FL128S, S25FL256S
Table 10.6 Device Geometry Definition for 128-Mbit and 256-Mbit Uniform Sector Devices
Byte Address
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h thru 3Fh
Data
18h (128 Mb)
19h (256 Mb)
02h
01h
09h
00h
01h
3Fh (128 Mb)
7Fh (256 Mb)
00h
00h
04h
FFh
Device Size = 2N bytes
Description
Flash Device Interface Description:
0000h = x8 only
0001h = x16 only
0002h = x8/x16 capable
0003h = x32 only
0004h = Single I/O SPI, 3-byte address
0005h = Multi I/O SPI, 3-byte address
0102h = Multi I/O SPI, 3- or 4-byte address
Max. number of bytes in multi-byte write = 2N
(0000 = not supported
0008h = 256B page
0009h = 512B page)
Number of Erase Block Regions within device
1 = Uniform Device, 2 = Boot Device
Erase Block Region 1 Information (refer to JEDEC JEP137):
64 sectors = 64-1 = 003Fh (128 Mb)
128 sectors = 128-1 = 007Fh (256 Mb)
256-kB sectors = 256 bytes x 0400h
RFU
Table 10.7 CFI Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Byte Address
40h
41h
42h
43h
44h
45h
46h
47h
48h
Data
50h
52h
49h
31h
33h
21h
02h
01h
00h
Description
Query-unique ASCII string “PRI”
Major version number = 1, ASCII
Minor version number = 3, ASCII
Address Sensitive Unlock (Bits 1-0)
00b = Required
01b = Not Required
Process Technology (Bits 5-2)
0000b = 0.23 µm Floating Gate
0001b = 0.17 µm Floating Gate
0010b = 0.23 µm MirrorBit
0011b = 0.11 µm Floating Gate
0100b = 0.11 µm MirrorBit
0101b = 0.09 µm MirrorBit
1000b = 0.065 µm MirrorBit
Erase Suspend
0 = Not Supported
1 = Read Only
2 = Read and Program
Sector Protect
00 = Not Supported
X = Number of sectors in group
Temporary Sector Unprotect
00 = Not Supported
01 = Supported
Document Number: 001-98283 Rev. *I
Page 122 of 144
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