AM28F512-70FIB View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM28F512-70FIB

512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

Advanced Micro Devices 

ERASE AND PROGRAMMING PERFORMANCE

Limits

Parameter

Typ

Max

Min (Note 1) (Note 2) Unit

Comments

Chip Erase Time

Chip Programming Time

1

10

sec Excludes 00H programming prior to erasure

1

6

sec Excludes system-level overhead

Write/Erase Cycles

10,000

Cycles

Notes:

1. 25°C, 12 V VPP.

2. Maximum time specified is lower than worst case. Worst case is derived from the Flasherase/Flashrite pulse count

(Flasherase = 1000 max and Flashrite = 25 max). Typical worst case for program and erase is significantly less than the actual

device limit.

LATCHUP CHARACTERISTICS

Parameter

Input Voltage with respect to VSS on all pins except I/O pins (Including A9 and VPP)

Input Voltage with respect to VSS on all pins I/O pins

Current

Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.

PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Test Conditions

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

VPP Input Capacitance

VIN = 0

VOUT = 0

VPP = 0

Note: Sampled, not 100% tested. Test conditions TA = 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Minimum Pattern Data Retention Time

Test Conditions

150°C

125°C

Min

–1.0 V

–1.0 V

–100 mA

Max

13.5 V

VCC + 1.0 V

+100 mA

Typ

Max

Unit

8

10

pF

8

12

pF

8

12

pF

Min

Unit

10

Years

20

Years

Am28F512

31

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