AM29F100B-120EE View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM29F100B-120EE

1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

Advanced Micro Devices 

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Chip/Sector Erase Time

Byte Programming Time

Word Programming Time

Chip Programming Time (Note 3)

Typ (Note 1)

1.5

14

28

1.8

Limits

Max (Note 2)

15

1000

2000

12.5

Unit

Comments

sec

Excludes 00h programming prior to

erasure (Note 4)

µs

µs

Excludes system-level overhead

(Note 5)

sec

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 5.0 V VCC, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 4.5 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then

does the device set DQ5 = 1. See the section on DQ5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1

for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTIC

Parameter Description

Input Voltage with respect to VSS on I/O pins

VCC Current

Note: Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time.

Min

–1.0 V

–100 mA

Max

VCC + 1.0 V

+100 mA

TSOP AND SO PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Test Conditions

VIN = 0

VOUT = 0

VIN = 0

Typ Max Unit

6

7.5

pF

8.5

12

pF

8

10

pF

DATA RETENTION

Parameter Description

Minimum Pattern Data Retention Time

Test Conditions

Min

150°C

10

125°C

20

Unit

Years

Years

Am29F100

34

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