IRF640FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

IRF640FP

N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET

STMicroelectronics 

IRF640

®

IRF640FP

N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP

MESH OVERLAY™ MOSFET

TYPE

VDSS

RDS(on)

ID

IRF640

IRF640FP

200 V

200 V

< 0.18 Ω

< 0.18 Ω

18 A

18 A

s TYPICAL RDS(on) = 0.150 Ω

s EXTREMELY HIGH dV/dt CAPABILITY

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

3

2

1

TO-220

3

2

1

TO-220FP

APPLICATIONS

s HIGH CURRENT SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

Parameter

Value

Un it

IRF640

I RF 640F P

V DS

V DGR

VGS

ID

ID

IDM (•)

Ptot

Drain-source Voltage (VGS = 0)

Drain- gat e Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

200

200

± 20

18

18(**)

11

11(**)

72

72

125

40

1.0

0.32

V

V

V

A

A

A

W

W /o C

dv/dt(1) Peak Diode Recovery voltage slope

5

5

V/ns

VISO I nsulat ion Wit hstand Voltage (DC)



2000

V

Tstg Storage Temperature

-65 to 150

oC

Tj Max. Operating Junction Temperature

150

oC

(•) Pulse width limited by safe operating area

( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

(**) Limited only by Maximum Temperature Allowed

October 1999

1/9

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