IRF640 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
Manufacturer
IRF640 Datasheet PDF : 2 Pages
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IRF640
N-Channel Power MOSFET
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Symbol Min
Typ
Max Unit
Test Conditions
V(BR)DSS
200
-
-
V VGS=0V, ID=250µA
-
IDSS
-
-
-
0.2
mA VDS=200V, VGS=0V
1.0
VDS=160V, VGS=0V, TJ=125oC
IGSSF
-
IGSSR
-
-
100
VGSF=20V, VDS=0V
nA
-
-100
VGSR=-20V, VDS=0V
VGS(th)
2.0
-
4.0
V VDS=VGS, ID=250µA
RDS(on)
-
-
0.18
Ω VGS=10V, ID=10A(Note)
gFS
6.0
-
-
S VDS 3.2V, ID=10A(Note)
Ciss
-
Coss
-
Crss
-
-
1600
-
750
pF VDS=25V, VGS=0V, f=1.0MHz
-
300
td(on)
-
-
30
tr
-
td(off)
-
-
-
60
80
ns
VDD=30V, ID=10A,
VGS=10V, RG=4.7Ω(Note)
tf
-
-
60
Qg
-
36
63
Qgs
-
16
-
nC VDS=160V, ID=18A, VGS=10V(Note)
Qgd
-
26
-
Measured from the drain lead 0.25"
LD
-
4.5
-
nH from package to center of die
Internal Source Inductance
LS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Forward Turn-On Time
ton
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2%
-
7.5
-
nH
Measured from the source lead 0.25"
from package to source bond pad
-
1.8
2.0
V IS=18A, VGS=0V(Note)
-
450
-
ns IF=18A, di/dt=100A/µs(Note)
Intrinsic turn-on time is neglegible and dominated by inductance LS+LD
-
-
1.0 oC/W -
-
-
62.5
DC COMPONENTS CO., LTD.
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