STPS60L40CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS60L40CW Datasheet PDF : 4 Pages
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STPS60L40CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
400
350
300
250
200
150
100 IM
50
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
1E+3
1E+2
1E+1
1E+0
Tj=150°C
Tj=125°C
Tj=100°C
1E-1
1E-2
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40
C(nF)
10.0
1.0
0.1
1
2
F=1MHz
Tj=25°C
VR(V)
5
10
20
50
Fig. 9: Forward voltage drop versus forward
current (per diode).
IFM(A)
200
100
Typical values
Tj=150°C
10
Maximum values
Tj=125°C
Maximum values
Tj=100°C
Maximum values
Tj=25°C
VFM(V)
1
0.0 0.2 0.4 0.6 0.8
1.0
1.2
1.4
3/4
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