2N2905 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
2N2905 Datasheet PDF : 3 Pages
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PNP 2N2905 – 2N2905A
TC=25°C unless otherwise noted
Symbol
ICBO
ICEX
VCEO
VCBO
VEBO
hFE
VCE(SAT)
VBE(SAT)
Ratings
Test Condition(s)
Min Typ Mx
Collector Cutoff Current
VCB=-50 V, IE=0
2N2905A -
2N2905 -
VCB=-50 V, IE=0, Tj=150°C
2N2905A
2N2905
-
-
- -10
- -20
- -10
- -20
Collector Cutoff Current
VCE=-30 V, VBE=0.5V
2N2905A
2N2905
-
- -50
Collector Emitter Breakdown
Voltage
IC=-10 mA, IB=0
2N2905A -60 - -
2N2905 -40 - -
Collector Base Breakdown
Voltage
IC=-10 µA, IE=0
2N2905A
2N2905
-60
-
-
Emitter Base Breakdown
Voltage
IE=-10 µA, IC=0
2N2905A
2N2905
-5
-
-
IC=-0.1 mA, VCE=-10 V
2N2905A 75 - -
2N2905 35 - -
IC=-1 mA, VCE=-10 V
2N2905A 100 - -
2N2905 50 - -
DC Current Gain
IC=-10 mA, VCE=-10 V
2N2905A 100 - -
2N2905 75 - -
IC=-150 mA, VCE=-10 V (1) 2N2905A 100 - 300
2N2905 40 - 120
IC=-500 mA, VCE=-10 V (1) 2N2905A 50 -
-
2N2905 30 - -
Collector-Emitter saturation IC=-150 mA, IB=-15 mA
2N2905A
2N2905
-
- -0.4
Voltage (1)
IC=-500 mA, IB=-50 mA
2N2905A
2N2905
-
- -1.6
Base-Emitter saturation
IC=-150 mA, IB=-15 mA
2N2905A
2N2905
-
- -1.3
Voltage (1)
IC=-500 mA, IB=-50 mA
2N2905A
2N2905
-
- -2.6
Unit
nA
µA
nA
V
V
V
-
V
Symbol
Ratings
fT
Transition frequency
Test Condition(s)
Min Typ Mx
IC =-50 mA, VCE =-20 V
f = 100MHz
2N2905A
2N2905
200
-
-
Unit
MHz
Symbol
td
tr
CCBO
Ratings
Delay time
Rise time
Collector-Base capacitance
CEBO
Emitter-Base capacitance
(1) Pulse conditions : tp < 300 µs, δ =2%
Test Condition(s)
Min Typ Mx
IC=-150 mA ,IB =-15 mA
-
-VCC=-30 V
-
IE= Ie = 0 ,VCB=-10 V
f = 100kHz
2N2905A
2N2905
-
IC= Ic = 0 ,VEB=-2 V
f = 100kHz
2N2905A
2N2905
-
- 10
- 40
-8
- 30
Unit
ns
pF
pF
COMSET SEMICONDUCTORS
2/3
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