STD30PF03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD30PF03L Datasheet PDF : 8 Pages
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STD30PF03L - STD30PF03L-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tj
Maximum Operating Junction Temperature
2.14
°C/W
100
°C/W
275
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)
Max Value
24
350
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 12 A
VGS = 5 V, ID = 12 A
Min.
1
Typ. Max.
0025
0.032
0.028
0.040
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V, ID = 12 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
23
1670
345
120
Max.
Unit
S
pF
pF
pF
2/8
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