2N6102 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2N6102

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

VCEO(SUS) Collector-emitter sustioning voltage

VCEsat-1 Collector-emitter saturation voltage

VCEsat-2 Collector-emitter saturation voltage

VBE-1

Base-emitter on voltage

VBE-2

Base-emitter on voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

fT

Transition frequency

CONDITIONS

IC=0.1A ;IB=0

IC=5A;IB=0.5A

IC=15A;IB=5A

IC=5A ; VCE=4V

IC=15A ; VCE=4V

VCB=Rated VCBO;IE=0

TC=150℃

VEB=8V; IC=0

IC=8A ; VCE=4V

IC=15A ; VCE=4V

IC=1A ; VCE=10V

www.jmnic.com

2N6102 2N6103

MIN TYP. MAX UNIT

45

V

1.3

V

3.5

V

1.3

V

3.5

V

0.5

2.0

mA

1.0 mA

15

80

5

0.8

MHz

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