BYT16 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BYT16 Datasheet PDF : 5 Pages
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BYT16P-400
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Parameter
Rth(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
Per diode
Total
Coupling
Value
3.75
2
0.25
Unit
°C/W
Symbol
VF *
IR **
Parameter
Forward voltage drop
Reverse leakage
current
Test Conditions
Tj = 25°C
IF = 8 A
Tj = 100°C
Tj = 25°C
VR = VRRM
Tj = 100°C
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.1 x IF(AV) + 0.024 IF2(RMS)
RECOVERY CHARACTERISTICS
Min. Typ. Max. Unit
1.5
V
1.4
15
µA
2.5 mA
Symbol
trr
Tj = 25°C
Test Conditions
IF = 1A VR = 30V dIF/dt = - 15A/µs
IF = 0.5A IR = 1A Irr = 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
Min. Typ. Max. Unit
75 ns
35
Symbol
tIRM
IRM
Parameter
Maximum reverse
recovery time
Maximum reverse
recovery current
C = VRP
VCC
Turn-off overvoltage
coefficient
Test Conditions
dIF/dt = - 32 A/µs
dIF/dt = - 64 A/µs
dIF/dt = - 32 A/µs
dIF/dt = - 64 A/µs
VCC = 200 V
IF = 8 A
Lp ≤ 0.05 µH
Tj = 100°C
(see fig. 11)
Tj = 100°C VCC = 120V IF = IF(AV)
dIF/dt = - 8A/µs Lp = 9µH
(see fig. 12)
Min. Typ. Max. Unit
75 ns
50
2.2 A
2.8
3.3
/
Fig. 1: Low frequency power losses versus Fig. 2: Peak current versus form factor.
average current.
2/5
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