STPIC6C595MTR View Datasheet(PDF) - STMicroelectronics
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Description
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STPIC6C595MTR Datasheet PDF : 22 Pages
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STPIC6C595
Electrical characteristics
3.2
Switching characteristics
Table 6. Switching characteristics (VCC = 5 V, TC = 25 °C, unless otherwise specified.)
Symbol
Parameter
Test conditions
Min Typ Max Unit
Propagation delay
tPHL time, high to low level
output from G
80
ns
Propagation delay
tPLH time, low to high level CL = 30 pF, ID = 75 mA
output from G
(See Figure 4, Figure 5,
130
ns
Figure 6, Figure 7, Figure 20)
tr Rise time, drain output
60
ns
tf Fall time, drain output
50
ns
tpd propagation delay time
20
ns
ta
Reverse recovery
current rise time
IF = 100 mA, di/dt = 10 A/μs
(See Figure 5, Figure 6, and
trr Reverse recovery time Figure 9, Figure 10 )
39
ns
115
ns
Note: 1 All voltage value are with respect to GND
2 Each power DMOS source is internally connected to GND
3 Pulse duration ≤ 100 μs and duty cycle ≤ 2 %
4 Drain supply voltage = 15 V, starting junction temperature (TJS) = 25 °C. L = 1.5 H and
IAS = 200 mA (see Fig. 11 and 12)
5 Technique should limit TJ - TC to 10 °C maximum
6 These parameters are measured with voltage sensing contacts separate from the current-
carrying contacts.
7 Nominal current is defined for a consistent comparison between devices from different
sources. It is the current that produces a voltage drop of 0.5 V at TC = 85 °C.
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