IRFM450 View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
Manufacturer
IRFM450 Datasheet PDF : 2 Pages
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IRFM450
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
500V
12A
0.415Ω
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN TO–220 METAL AND
SURFACE MOUNT PACKAGES
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
IDM
Pulsed Drain Current 1
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
±20V
12A
8A
48A
150W
1.2W/°C
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Current 1
Repetitive Avalanche Energy 1
Peak Diode Recovery 3
750mJ
12A
15mJ
3.5V/ns
TJ , Tstg Operating and Storage Temperature Range
TL
Lead Temperature measured 1/16” (1.6mm) from case for 10 sec.
RθJC
Thermal Resistance Junction to Case
RθCS
Thermal Resistance Case to Sink (Typical)
RθJA
Thermal Resistance Junction to Ambient
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ VDD = 50V , L ≥ 9.4mH , RG = 25Ω , Peak IL = 12A , Starting TJ = 25°C
3) @ ISD ≤ 12A , di/dt ≤ 130A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
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