STPS1L40 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS1L40

Low drop power Schottky rectifier

STMicroelectronics 

Characteristics

Figure 7: Relative variation of thermal impedance

junction to ambient versus pulse duration (SMB)

Zth(j-a)/Rth(j-a)

1.0

0.9

SMB

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02

1.E-01

1.E+00

1.E+01

t P (s)

1.E+02

1.E+03

STPS1L40

Figure 8: Relative variation of thermal impedance

junction to lead versus pulse duration

(SOD123Flat)

Zth(j-l)/Rth(j-l)

1.0

SOD123Flat

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1 Single pulse

0.0

1.E-04

1.E-03

1.E-02

1.E-01

t P (s)

1.E+00

1.E+01

Figure 9: Reverse leakage current versus reverse

voltage applied (typical values)

IR(mA)

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

0

5

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 25 °C

VR(V)

10

15

20

25

30

35

40

Figure 10: Junction capacitance versus reverse

voltage applied (typical values)

C(pF)

1000

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

100

10

1

VR(V)

10

100

Figure 11: Forward voltage drop versus forward

current (typical values)

IF (A)

10.00

1.00

Tj = 125 °C

0.10

Tj = 25 °C

Tj = 75 °C

0.01

VF(V)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Figure 12: Thermal resistance junction to ambient

versus copper surface under each lead

(typical values)

Rth(j-a)(°C/W)

200

SMA

150

100

Epoxy printed board FR4, eCu = 35 µm

50

SCu (cm²)

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

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DocID5507 Rev 7

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